onsemi BC182LB

Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 350 mW, TO-92, Through Hole

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 10muA 5V 100mA 350mW 150MHz

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

NPN General Purpose Amplifer Product Highlights: This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.

Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:50V; DC Collector Current:0.5A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M

TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:80; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:2mA; Device Marking:BC182LB; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:240; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:a; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Voltage Vcbo:60V