供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-07-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi AFGHL40T65SPD 的描述。
IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance.
Trans IGBT Chip N-CH 650V 80A 267000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Transistors FS3 T TO247 40A 65
IGBT TRENCH FS 650V 80A TO-247-3
ON Semiconductor, AFGHL40T65SPD
Igbt, 650V, 80A, 267W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:267W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Onsemi AFGHL40T65SPD
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.4 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current80 A
Max Collector Current80 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation267 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation267 W
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time18 ns
Dimensions
Height24.75 mm