由其分销商提供的 onsemi 2N5885G 的描述。
TRANSISTOR, BIPOLAR, SI, NPN, HIGH POWER, VCEO 60VDC, IC 25A, PD 200W, TO-204AA (TO-3)
25 A, 60 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
2N Series 60 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA
ON SEMICONDUCTOR - 2N5885G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 4 MHz, 200 W, 50 A, 4 hFE
Trans GP BJT NPN 60V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
BIPOLAR TRANSISTOR, NPN, 60V TO-204
onsemi NPNTransistor, TO-204AAencapsulation, Through hole mounting, Maximum DC collector current25 A, maximum collector-emission voltage60 V
TRANSISTOR, BIPOL, NPN, 60V, TO-204-2; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transis