由其分销商提供的 onsemi 2N5190G 的描述。
Bipolar (BJT) Single Transistor, NPN, 40 V, 4 A, 40 W, TO-225, Through Hole
4.0 A, 40 V NPN Bipolar Power Transistor
Trans GP BJT NPN 40V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
ON SEMICONDUCTOR - 2N5190G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 2 MHz, 40 W, 4 A, 2 hFE
TRANSISTOR, NPN, 40V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 10hFE; Transistor Ca
Bipolar Transistor, Npn, 40V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi 2N5190G.