供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-12-31
LTD Date2015-03-31
相关零件
NXP SemiconductorsPMPB16XN,115
Compliant Tape & Reel (TR) 21 mΩ SOT 6 Obsolete (Last Updated: 1 day ago) 775 pF 1.7 W
NXP SemiconductorsPMDPB56XN,115
510mW 1V 1.5V@ 250¦ÌA 2.9nC@ 4.5V 2N 30V 73m¦¸@ 3.1A,4.5V 170pF@15V HUSON6
描述
由其分销商提供的 NXP Semiconductors PMV22EN,215 的描述。
Mosfet Transistor, N Channel, 5.2 A, 30 V, 0.017 Ohm, 10 V, 1.5 V
Trans MOSFET N-CH 30V 5.2A 3-Pin TO-236AB T/R
30 V, 5.2 A N-channel Trench MOSFET
Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SMALL SIGNAL FIELD-EFFECT TRANSI
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance480 pF
Max Dual Supply Voltage30 V
Max Operating Temperature150 °C
Max Power Dissipation4.17 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation510 mW
Rds On Max22 mΩ
Rise Time15 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time4 ns