NXP Semiconductors MW6S004NT1

Name: NXP Semiconductors MW6S004NT1
Brand: NXP Semiconductors
SKU: MW6S004NT1

RF Power Transistor, 1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811

$ 13.67

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	MW6S004NT1	597	1	Cut Tape	25.490	20.060	17.810	17.150	17.150
Arrow Electronics		MW6S004NT1	1	1		12.670	12.670	12.670	12.670	12.670
UnikeyIC		MW6S004NT1	51	10	Cut Tape		17.645	15.535	14.812	14.812	9h
DigiKey	2	MW6S004NT1CT-ND	519	1	Cut Tape	25.170	20.173	17.553	16.181	16.181
RFMW		MW6S004NT1	0	1							9h

数据表和文档

下载 NXP Semiconductors MW6S004NT1 的数据表和制造商文档。

IHS

Datasheet13 页16 年前

LCSC

Newark

Freescale Semiconductor

库存历史记录

3 个月趋势:

-7.84%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00

Introduction Date2006-01-05

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-09-30

描述

由其分销商提供的 NXP Semiconductors MW6S004NT1 的描述。

RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811

RFMW

TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pin

Farnell

RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes

Newark