NXP Semiconductors MRF101BN

Name: NXP Semiconductors MRF101BN
Brand: NXP Semiconductors
SKU: MRF101BN

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

$ 22.99

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Newark	MRF101BN	468	1		44.820	32.860	32.850	32.850	32.850
Verical	MRF101BN	35	35				22.830	22.830	22.830
DigiKey	568-14752-ND	150	1	Tube	40.580	33.008	29.041	28.051	28.051
RFMW	MRF101BN	0	1	Tube						19h
Future Electronics	MRF101BN	0	50	Bulk			23.140	22.990	22.990

数据表和文档

下载 NXP Semiconductors MRF101BN 的数据表和制造商文档。

LCSC

Datasheet41 页6 年前

IHS

NXP Semiconductors SCT

库存历史记录

3 个月趋势:

-24.15%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 NXP Semiconductors MRF101BN 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00

Introduction Date2018-11-01

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-09-30

描述

由其分销商提供的 NXP Semiconductors MRF101BN 的描述。

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

RFMW

MRF Series 100W CW 1.8-250 MHz 50V Wideband RF Power LDMOS Transistor - TO-220-3

Future Electronics

Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube

Verical

182W 6V,10V 1.7V 1N 133V 8.8A 149pF@ 50V TO-220-3

UnikeyIC

RF Power Field-Effect Transistor

IHS

WIDEBAND RF POWER LDMOS TRANSIST

DigiKey Marketplace

Rf Fet Transistor, 133V, 182W, To-220; Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:182W; Operating Frequency Min:1.8Mhz; Operating Frequency Max:250Mhz; Rf Transistor Case:To-220; No. Of Rohs Compliant: Yes |NXP Semiconductors MRF101BN

Newark