NXP Semiconductors MRF101AN

Name: NXP Semiconductors MRF101AN
Brand: NXP Semiconductors
SKU: MRF101AN

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

$ 30.355

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	85AC2014	124	1		52.170	43.870	39.520	38.440	38.440	6d
Verical		MRF101AN	200	200					32.486	32.486
Arrow Electronics	2	MRF101AN	26	1		26.215	26.215	26.215	26.215	26.215
Rochester Electronics		MRF101AN	3					26.440	23.660	22.260	1d
UnikeyIC		MRF101AN	239	1	Tube	50.736	43.478	38.601	38.601	38.601	11h

数据表和文档

下载 NXP Semiconductors MRF101AN 的数据表和制造商文档。

IHS

Datasheet41 页7 年前

Upverter

库存历史记录

3 个月趋势:

-77.90%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00

Introduction Date2018-11-01

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-09-30

描述

由其分销商提供的 NXP Semiconductors MRF101AN 的描述。

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

RFMW

TO-220-3 LDMOS ROHS3Compliant RF Mosfet 100mA 115W 21.1dB 1.8MHz~250MHz

Fly-Wing Technology

MRF Series 50 V 250 MHz 100 W CW Wideband RF Power LDMOS Transistor - TO220-3

Future Electronics

Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube

Verical

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-220AB

IHS

Rf Fet Transistor, 133V, 182W, To-220; Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:182W; Operating Frequency Min:1.8Mhz; Operating Frequency Max:250Mhz; Rf Transistor Case:To-220; No. Of Rohs Compliant: Yes |Nxp MRF101AN

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