供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date2002-02-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-06-30
LTD Date2015-12-31
描述
由其分销商提供的 NXP Semiconductors 2N7002F 的描述。
Power Field-Effect Transistor, 0.475A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 0.475A 3-Pin TO-236AB
Mosfet, N Channel, 60V, 0.475A, Sot23
475 mA 60 V N-CHANNEL Si SMALL SIGNAL MOSFET TO-236AB
N-channel TrenchMOS logic level FET TO-236 3-Pin
MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 475mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.78ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Pow
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)475 mA
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)60 V
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
Power Dissipation830 mW
Threshold Voltage2 V