由其分销商提供的 NTE Electronics NTE6409 的描述。
Transistor Unijunction Silicon TO-18 Ie=50ma Vbb=35V Itr=0.68-0.82 Rbbo=4.7-9.1K Ohm
NTE Electronics
UJT, UNIJUNCTION, 300 MW (MAX.), 2 A (MAX.), 10 MA (TYP.), TO-18, -65 C
UNIJUNC TRANSISTOR, 0.3W 50mA TO-18
Unijunction Transistor, 2uA I(P), TO-18
Unijunction Transistor 3-Pin TO-18
TRANSISTOR - UNIJUNCTION SILICON TO18
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
replacement Transistors TO-18 UNIJUNCT TRANS
UNIJUNC TRANSISTOR, 0.3W 50mA TO-18; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:10mA; Power Dissipation Pd:300mW; No. of Pins:2; Operating Temperature Max:125°C; MSL:-; Packaging:Each