供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-06-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
描述
由其分销商提供的 NTE Electronics NTE222 的描述。
Mosfet N-channel Dual Gate 20V Idss= 5-35ma TO-72 Case Gate Protected Vhf AMP/mixer Applications
NTE Electronics
MOSFET, N-CH, VDSS 25V, ID 50MA, 3-PIN METAL CASE, PD 360MW, -65DEGC, +175DEGC
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
DUAL N CHANNEL MOSFET, 25V, TO-72; Trans; DUAL N CHANNEL MOSFET, 25V, TO-72; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:50mA; Drain Source Voltage Vds, N Channel:25V; Power Dissipation Pd:360mW; Operating Temperature Range:-65°C to +175°C
Dual N Channel Mosfet, 25V, To-72; Channel Type:N Channel; Drain Source Voltage Vds N Channel:25V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:50Ma; Continuous Drain Current Id P Channel:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE222
制造商别名
NTE Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。NTE Electronics 也可称为以下名称：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技术规格
Physical
Body MaterialMetal
Case/PackageTO-72
MountThrough Hole
Number of Terminals4
Weight72.574779 g
Technical
Continuous Drain Current (ID)50 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Voltage (Vdss)25 V
Gain14 dB
Gate to Source Voltage (Vgs)30 V
Max Operating Temperature175 °C
Max Power Dissipation330 mW
Min Breakdown Voltage25 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation360 mW
Dimensions
Height4.826 mm
Length88.9 mm
Width5.588 mm