由其分销商提供的 NTE Electronics NTE2107 的描述。
Integrated Circuit 4k Dynamic Ram(dram) 200ns 22-lead DIP
NTE Electronics
replacement Memory 4K X 1 DRAM 200NS
DRAM Memory IC; Memory Type:NMOS DRAM; Memory Organization:4K x 1; Access Time, Tacc:200ns; Memory Case Style:DIP; No. of Pins:16; Package/Case:16-DIP; Mounting Type:Through Hole