由其分销商提供的 NTE Electronics NTE2102 的描述。
INTEGRATED CIRCUIT 1K STATIC RAM(SRAM) 350NS 16-LEAD DIP
NTE Electronics
SRAM Chip Async Single 5V 1K-bit 1K x 1 350ns 16-Pin PDIP
Standard SRAM, 1KX1, 350ns, NMOS, PDIP16
replacement Memory 1K X 1 SRAM 350NS
SRAM Memory IC; Memory Type:NMOS SRAM; Interface Type:Serial; Memory Size:1KB; Memory Organization:1K x 1; Access Time, Tacc:350ns; Memory Voltage, Vcc:5V; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V