供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-13
Lifecycle StatusObsolete (Last Updated: 7 months ago)
相关零件
onsemiKSD1616ALBU
Bulk Through Hole NPN KSD1616 Bipolar (BJT) Transistor 300 @ 100mA 2V 1A 750mW 160MHz
描述
由其分销商提供的 NTE Electronics 2N3906 的描述。
Transistor PNP Silicon 40V IC=200ma TO-92 Case General Purpose Amplifier And Switch
NTE Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Rf Transistor, Pnp, 80V, To-92; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:-; Power Dissipation Pd:625Mw; Dc Collector Current:800Ma; Rf Transistor Case:to-92; No. Of Pins:3Pins Rohs Compliant: Yes
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92
-0.25V @IC = -10 mA,IB = -1.0 mA PNP 625mW 5V 40V 40V 200mA TO-92 Through hole mounting 5.33mm(height)
制造商别名
NTE Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。NTE Electronics 也可称为以下名称：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技术规格
Physical
Case/PackageTO-92
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Voltage (VCEO)40 V
hFE Min30
Max Collector Current200 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
Transition Frequency250 MHz