Nexperia PSMN1R6-30BL,118

Name: Nexperia PSMN1R6-30BL,118
Brand: Nexperia
SKU: PSMN1R6-30BL,118

Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 3.038

EOL

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	PSMN1R6-30BL,118	5,600					3.020	2.700	2.540	18h
Verical	PSMN1R6-30BL,118	5,600	95				3.775	3.375	3.175
Aztech	PSMN1R6-30BL,118	5,830			1.510	1.510	1.510	1.510	1.510	13h
Worldway Electronics	PSMN1R6-30BL,118	108,699	7	Tape & Reel		3.220	3.159	3.038	2.977	18h
Fly-Wing Technology	PSMN1R6-30BL,118	1,713			2.577	2.431	2.293	2.041	2.041	17h

数据表和文档

下载 Nexperia PSMN1R6-30BL,118 的数据表和制造商文档。

Future Electronics

Datasheet15 页14 年前

IHS

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-03-22

Lifecycle StatusEOL (Last Updated: 2 years ago)

LTB Date2022-06-30

LTD Date2022-12-31

Manufacturer Lifecycle StatusDISCONTINUATION OF DELIVERY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PSMN1R6-30BL,118 的描述。

Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK

Nexperia

PSMN Series 30 V 1.9 mOhm 306 W Surface Mount N-Channel Mosfet - D2PAK

Future Electronics

Mosfet, N Channel, 30V, 100A, D2Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.00158Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark