Nexperia PMV50UPE,215

Name: Nexperia PMV50UPE,215
Brand: Nexperia
SKU: PMV50UPE,215

500mW(Ta) 8V 900mV@ 250¦ÌA 15.7nC@ 4.5 V 1P 20V 66m¦¸@ 3.2A, 4.5V 3.2A 24pF@10V TO-236AB 1.1mm

$ 0.134

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Distributor	SKU		Min
Newark	PMV50UPE,215	2	5		0.663	0.418	0.278	0.278
Arrow Electronics	PMV50UPE,215	1,765	1	0.474	0.271	0.185	0.119	0.119
Verical	PMV50UPE,215	1,765	23			0.185	0.119	0.090
Rochester Electronics	PMV50UPE,215	120				0.179	0.149	0.133	21h
Avnet	PMV50UPE,215	0	12K						2d

数据表和文档

下载 Nexperia PMV50UPE,215 的数据表和制造商文档。

IHS

Datasheet14 页13 年前

库存历史记录

3 个月趋势:

-79.99%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-07-20

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PMV50UPE,215 的描述。

500mW(Ta) 8V 900mV@ 250¦ÌA 15.7nC@ 4.5 V 1P 20V 66m¦¸@ 3.2A,4.5V 3.2A 24pF@10V TO-236AB 1.1mm

Unikeyic (ICkey)

Mosfet Transistor, P Channel, -3.7 A, -20 V, 0.05 Ohm, -4.5 V, -600 Mv Rohs Compliant: Yes |Nexperia PMV50UPE,215

Newark

Trans MOSFET P-CH 20V 3.2A 3-Pin TO-236AB T/R

Verical

20 V, single P-channel Trench MOSFET

Nexperia

Small Signal Field-Effect Transistor

Semicontronic

Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

MOSFET, P CH, 20V, 4A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;

Farnell