供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-16
Lifecycle StatusProduction (Last Updated: 2 months ago)
描述
由其分销商提供的 Nexperia PMPB20EN 的描述。
7.2 A 30 V 0.0245 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 7.2A I(D), 30V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30 V N-channel Trench MOSFET
new, original packaged
MOSFET, N-CH, 30V, SOT1220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT-1220
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Resistance24.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance435 pF
Max Operating Temperature150 °C
Max Power Dissipation12.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Threshold Voltage1.5 V
Turn-Off Delay Time9 ns
Turn-On Delay Time9 ns
Dimensions
Height650 µm
Length2.1 mm
Width2.1 mm