供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-18
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
描述
由其分销商提供的 Nexperia PMGD290UCEAX 的描述。
Trans MOSFET N/P-CH 20V 0.725A/0.5A Automotive 6-Pin TSSOP T/R
PMGD290UCEAX Series 20 V 320 mW 0.68/1.14 nC Dual N/P-Channel MOSFET - TSSOP-6
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 725 mA, 725 mA, 0.29 ohm
Small Signal Field-Effect Transistor, 0.725A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N / P CH, 20V/20V, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 725mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)725 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance380 mΩ
Element ConfigurationDual
Fall Time72 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance83 pF
Max Operating Temperature150 °C
Max Power Dissipation320 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape & Reel
Rds On Max380 mΩ
Rise Time30 ns
Schedule B8541210080
Turn-Off Delay Time80 ns
Turn-On Delay Time18 ns