Nexperia PMGD280UN,115

Name: Nexperia PMGD280UN,115
Brand: Nexperia
SKU: PMGD280UN,115

Transistor MOSFET Array Dual N-CH 20V 0.87A 6-Pin SC-88 T/R

$ 0.115

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	PMGD280UN,115	6,282	5	Cut Tape		0.478	0.303	0.303	0.303
Verical	5	PMGD280UN,115	3,000	3K						0.071
Arrow Electronics	3	PMGD280UN,115	159	159					0.097	0.097
Rochester Electronics		PMGD280UN,115	327,000					0.162	0.135	0.120	7h
TME	2	PMGD280UN.115	4,476	1		0.220	0.200	0.152	0.120	0.112	7h

数据表和文档

下载 Nexperia PMGD280UN,115 的数据表和制造商文档。

TME

Datasheet13 页28 年前

Newark

IHS

element14 APAC

库存历史记录

3 个月趋势:

-5.46%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-02-10

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PMGD280UN,115 的描述。

Transistor MOSFET Array Dual N-CH 20V 0.87A 6-Pin SC-88 T/R

EBV Elektronik

Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Surface Mount MOSFET - SOT-363

Future Electronics

Trans MOSFET N-CH 20V 0.87A 6-Pin SOT-363 T/R

Verical

870 mA 20 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET

Component Stockers USA

MOSFET, N-KANAL, TRENCH DL, 20V, SOT363

ComSIT Distribution GmbH

Pmgd280Un/Sot363/Sc-88 Rohs Compliant: Yes |Nexperia PMGD280UN,115.

Newark

Small Signal Field-Effect Transistor, 0.87A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Dual N-channel TrenchMOS ultra low level FET

Nexperia

Nexperia NMOS, Vds=20 V, 870 mA, SOT-363, , 6

UnikeyIC

MOSFET, N CH, TRENCH DL, 20V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:870mA; Package / Case:SOT-363; Power Dissipation Pd:400mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC