Nexperia PEMD4,115

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = open

Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-666 T/R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

150mV@ 500¦ÌA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 300mW 1¦ÌA 50V 100mA SOT-666 1.7mm*1.3mm*600¦Ìm

Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; RF Transistor Case:SOT-666; No. of Pins:6 ;RoHS Compliant: Yes

TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:200; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose