Nexperia PBSS8110T,215

Name: Nexperia PBSS8110T,215
Brand: Nexperia
SKU: PBSS8110T,215

Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T, 215

$ 0.228

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Distributor		SKU	Min	Pkg
TME	2	PBSS8110T.215	1		0.535*	0.382*	0.382*	0.382*	0.382*	21h
Newark	2	PBSS8110T,215	5	Cut Tape		0.707	0.543	0.543	0.543
Avnet		PBSS8110T,215	3K						0.094	11h
Future Electronics		PBSS8110T,215	3K	Tape & Reel					0.380
element14 APAC	3	PBSS8110T,215	5	Cut Tape		0.831*	0.346*	0.339*	0.332*	22h

数据表和文档

下载 Nexperia PBSS8110T,215 的数据表和制造商文档。

IHS

Datasheet13 页2 年前

Datasheet0 页0 年前

Farnell

Nexperia

Burklin Elektronik

Newark

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-12-23

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PBSS8110T,215 的描述。

Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T,215

Burklin Elektronik

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

IHS

100 V, 1 A NPN low VCEsat transistor

Nexperia

Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin SOT-23 T/R

Verical

NPN low VCEsat transistor VCEO=100V VEBO=5V IC=1A SOT23

HQonline

1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

Component Stockers USA

TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V

Farnell