Nexperia PBSS304NX,115

Name: Nexperia PBSS304NX,115
Brand: Nexperia
SKU: PBSS304NX,115

PBSS304NX Series 60 V 4.7 A SMT NPN Low VCEsat (BISS) Transistor - SOT-89

$ 0.461

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
TME	2	PBSS304NX.115	45	1		1.088*	0.674*	0.498*	0.498*	0.498*	20h
Newark	2	PBSS304NX,115	0	1	Cut Tape	1.700	1.060	0.851	0.851	0.851
Avnet		PBSS304NX,115	0	4K						0.215	3d
Future Electronics		PBSS304NX,115	0	1K	Tape & Reel				1.030	1.030
element14 APAC	3	PBSS304NX,115	0	1	Cut Tape	1.438*	0.896*	0.760*	0.529*	0.529*	19h

数据表和文档

下载 Nexperia PBSS304NX,115 的数据表和制造商文档。

IHS

Datasheet13 页2 年前

Datasheet15 页19 年前

Newark

Nexperia

TME

Farnell

库存历史记录

3 个月趋势:

-94.86%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.75

Introduction Date2006-08-17

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia PBSS304NX,115 的描述。

PBSS304NX Series 60 V 4.7 A SMT NPN Low VCEsat (BISS) Transistor - SOT-89

Future Electronics

Trans GP BJT NPN 60V 4.7A 4-Pin(3+Tab) SOT-89 T/R

Verical

Power Bipolar Transistor, 4.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA, Plastic/Epoxy, 3 Pin

IHS

245mV@ 235mA,4.7A NPN 2.1W 5V 100nA 60V 60V 4.7A SOT-89 4.6mm*2.6mm*1.6mm

UnikeyIC

60V 600mW 4.7A 115@6A2V 130MHz 170mV@4.7A235mA NPN +150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS

Dasenic

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ, ft:130MHz; Power Dissipation Pd:2.1W; DC Collector Current:4.7A; DC Current Gain Max (hfe):520 ;RoHS Compliant: Yes

Newark

TRANS NPN 60V 4.7A SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:600mW; DC Collector Current:4.7A; DC Current Gain hFE:520; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:35mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:300; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)

element14 APAC