Nexperia BST50,115

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
$ 0.392
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
TME
2
BST50.11581
3h
NewarkBST50,11501Cut Tape
AvnetBST50,11506K
1d
Future ElectronicsBST50,11501KTape & Reel
Component Stockers USABST50,11519,237
>1wk

数据表和文档

下载 Nexperia BST50,115 的数据表和制造商文档。

IHS

Datasheet8 页2 年前
Datasheet8 页25 年前

Farnell

Upverter

element14 APAC

库存历史记录

3 个月趋势:
-99.77%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 Nexperia BST50,115 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

相关零件

Diodes Inc.BCX54TA
BCX54 Series 45 V 1 A 1 W Surface Mount NPN Medium Power Transistor - SOT-89-3
详细信息
Diodes Inc.BCX5416TA
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
详细信息
Diodes Inc.BCX5410TA
Single Bipolar Transistor, NPN, 54 V, 1 A, 2 W, SOT-89, 3 Pins, Surface Mount
详细信息
ROHM2SD1664T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
详细信息
ROHM2SD1664T100Q
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
详细信息
ROHM2SD1664T100P
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
详细信息

描述

由其分销商提供的 Nexperia BST50,115 的描述。

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Abacus Technologies
BST50 Series 45 V 1 A 1.3 W SMT NPN Darlington Transistor - SOT-89
Future Electronics
1000 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR TO-243AA
Component Stockers USA
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:200MHz; Power Dissipation, Pd:1.3W; DC Collector Current:1A; DC Current Gain Max (hfe):2000 ;RoHS Compliant: Yes
Newark
TRANS NPN 45V 0.5A SOT89; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:45V; Typ Gain Bandwidth ft:200MHz; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-89; Max Current Ic Continuous a:500mA; Max Voltage Vce Sat:1.3V; Min Hfe:2000; Power Dissipation:1.3W; Termination Type:SMD; Transistor Type:Darlington
Farnell

图片

Nexperia
Farnell
TME
element14 APAC
Future Electronics

制造商别名

Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

零件编号别名

该零件可能有以下备用零件编号：

  • BST50,115.
  • BST50115