Nexperia BSH203,215

Name: Nexperia BSH203,215
Brand: Nexperia
SKU: BSH203,215

BSH203 Sereies 30 V 1.65 Ohm 2.2 nC 417 mW P-Channel Silicon SMT MOSFET - SOT-23

$ 0.145

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		BSH203,215	25	1		1.030	0.628	0.396	0.265	0.265
Verical		BSH203,215	2,520	19				0.183	0.124	0.078
Arrow Electronics	2	BSH203,215	2,520	1		0.613	0.377	0.238	0.148	0.148
Future Electronics		BSH203,215	3,000	3K	Tape & Reel					0.240
TME	2	BSH203.215	63	1		0.400	0.216	0.216	0.216	0.216	12h

数据表和文档

下载 Nexperia BSH203,215 的数据表和制造商文档。

TME

Datasheet8 页27 年前

Farnell

Newark

库存历史记录

3 个月趋势:

-92.86%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1998-08-01

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia BSH203,215 的描述。

BSH203 Sereies 30 V 1.65 Ohm 2.2 nC 417 mW P-Channel Silicon SMT MOSFET - SOT-23

Future Electronics

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET P-CH 30V 470MA SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-280mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-680mV; Power Dissipation Pd:417mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-470mA; Package / Case:SOT-23; Power Dissipation Pd:417mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:-30V; Voltage Vgs Max:-680mV; Voltage Vgs Rds on Measurement:-4.5V

element14 APAC