供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1998-04-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
描述
由其分销商提供的 Nexperia BSH201,215 的描述。
Transistor MOSFET P-CH 60V 0.3A 3-Pin TO-236AB T/R
BSH201 Series 60 V 4.25 Ohm 3 nC 0.417 W P-Channel Silicon SMT MOSFET - SOT-23
MOSFET P, 60 V 0.3 A 417 mW SOT-23 | NXP BSH201215 (MOSFET P, 60 V 0.3 A 417 mW SOT-23 Transistors).
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 417 mW
MOSFET Devices; NEXPERIA; BSH201, 215; -60 V; -300 mA; 417 mW; 2.1 Ohm
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:417mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-300mA; Package / Case:SOT-23; Power Dissipation Pd:417mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:1.9V
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)300 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance70 pF
Max Dual Supply Voltage-60 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time4.5 ns
Schedule B8541210080
Threshold Voltage-1.9 V
Turn-Off Delay Time45 ns
Turn-On Delay Time2 ns
Voltage60 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm