Nexperia BSH108,215

Name: Nexperia BSH108,215
Brand: Nexperia
SKU: BSH108,215

BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23

$ 0.245

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Distributor		SKU		Min	Pkg
Arrow Electronics		BSH108,215	3	3			0.078	0.078	0.078	0.078
TME	2	BSH108.215	0	1		0.465	0.316	0.316	0.316	0.316	6h
Newark	2	BSH108,215	0	5	Cut Tape		0.707	0.460	0.460	0.460
Future Electronics		BSH108,215	0	3K	Tape & Reel					0.365
Avnet		BSH108,215	0	12K							19h

数据表和文档

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element14 APAC

Datasheet13 页29 年前

TME

Newark

IHS

iiiC

库存历史记录

3 个月趋势:

+46.09%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date2000-10-09

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

描述

由其分销商提供的 Nexperia BSH108,215 的描述。

BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23

Future Electronics

N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

MOSFET N-CH 30V 1.9A SOT23; Transistor Polarity:N Channel; On State Resistance:120mohm; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Cont Current Id:1A; Termination Type:SMD; ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 102 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 830

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