供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-04-29
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
描述
由其分销商提供的 Nexperia BCP55TF 的描述。
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 60V 1A 1800mW 4-Pin(3+Tab) SC-73 T/R Automotive AEC-Q101
NPN Transistor 1.8W 5V 100nA 60V 60V 1A SOT-223 SMD
60V 600mW 1A 63@150mA2V 155MHz 500mV@500mA50mA NPN +150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
TRANS, AEC-Q101, NPN, 60V, 1A, 1.3W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 155MHz; Power Dissipation Pd: 1.3W; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; No. of
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Contact PlatingTin
Number of Terminals4
Technical
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)60 V
hFE Min63
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Transition Frequency155 MHz