供应链
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1985-10-16
Lifecycle StatusProduction (Last Updated: 1 week ago)
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描述
由其分销商提供的 Nexperia BC807 的描述。
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
-700mV @ -50mA, -500mA PNP 345mW -5V 100nA -50V 45V 500mA SOT-23 SMD 3mm × 1.4mm × 1mm
Trans GP BJT PNP 45V 0.5A 3-Pin TO-236AB T/R
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:500mA; Collector Emitter Saturation Voltage, Vce(sat):0.7V; Power Dissipation, Pd:0.25mW ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC807; Gain Bandwidth ft Min:80MHz; Gain Bandwidth ft Typ:80MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:5D; Termination Type:SMD; Voltage Vcbo:50V
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage-45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min100
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage40 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm