供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date2003-05-05
Lifecycle StatusObsolete (Last Updated: 2 years ago)
LTB Date2015-06-30
LTD Date2015-12-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 years ago)
描述
由其分销商提供的 Nexperia 2N7002F,215 的描述。
Transistor MOSFET N-CH 60V 0.475A 3-Pin TO-236AB T/R
NEXPERIA - 2N7002F,215 - MOSFET, N CHANNEL, 60V, 475MA, 3-SOT-23, FULL REEL
Small Signal Field-Effect Transistor, 0.475A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:475mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):780mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
制造商别名
Nexperia 在全球拥有多个品牌，分销商可将其用作替代名称。Nexperia 也可称为以下名称：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技术规格
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight113.398093 g
Technical
Continuous Drain Current (ID)475 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance31 pF
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Nominal Vgs2 V
Number of Elements1
PackagingTape & Reel
Power Dissipation830 mW
Rds On Max2 Ω
Resistance5 Ω
Dimensions
Height1 mm
Length3 mm
Width1.4 mm