备用零件
Price @ 1000
$ 10.36
$ 30.37
$ 30.37
Stock
73,860
95,911
95,911
Authorized Distributors
6
1
1
Mount
-
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
1.2 kV
1.2 kV
1.2 kV
Continuous Drain Current (ID)
40 A
36 A
36 A
Threshold Voltage
-
3.2 V
3.2 V
Rds On Max
-
98 mΩ
98 mΩ
Gate to Source Voltage (Vgs)
23 V
20 V
20 V
Power Dissipation
231 W
192 W
192 W
Input Capacitance
-
950 pF
950 pF
供应链
Projected EOL Date2044-04-30
Country of AssemblyChina, Philippines
Country of FabricationUnited States of America
Country of OriginChina, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusREL (Last Updated: 3 days ago)
描述
由其分销商提供的 Microchip MSC080SMA120B 的描述。
Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247
Trans MOSFET N-CH SiC 1.2KV 37A 3-Pin(3+Tab) TO-247 Tube
MOSFET SIC 1200 V 80 mOhm TO-247
Microchip NMOS, Vds=1200 V, 26 A, TO-247
IC MCU 8BIT 16KB FLASH 100TQFP
SILICON CARBIDE POWER TRANSISTORS/MODULES
Sic Mosfet, N-Ch, 1.2Kv, 37A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:200W Rohs Compliant: Yes |Microchip Technology MSC080SMA120B
制造商别名
Microchip 在全球拥有多个品牌，分销商可将其用作替代名称。Microchip 也可称为以下名称：
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
技术规格
Physical
Case/PackageTO-247-3
Number of Pins3
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)23 V
HS Code8541.29.0055, 8541.29.0095
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation231 W
Schedule B8541290080
Turn-Off Delay Time19 ns
Turn-On Delay Time21 ns
Dimensions
Height25.96 mm