供应链
Projected EOL Date2049-02-05
Country of AssemblyPhilippines
Country of FabricationUnited States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
相关零件
MicrochipJAN2N3019S
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
描述
由其分销商提供的 Microchip JANTX2N3019S 的描述。
JANTX Series 80 V 1 A Through Hole Low Power NPN Silicon Transistor - TO-39
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Bag
NPN 800mW 7V 10μA 140V 80V 1A TO-39 Through hole mounting
CHIP TYPE 2C3019 GEOMETRY 4500 POLARITY PNP
RF SMALL SIGNAL TRANSISTOR SILICON CARBIDE
制造商别名
Microchip 在全球拥有多个品牌，分销商可将其用作替代名称。Microchip 也可称为以下名称：
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
技术规格
Physical
Case/PackageTO-39
MountThrough Hole
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)7 V
hFE Min50
HS Code8541.21.0095
Max Collector Current1 A
Max Junction Temperature (Tj)200 °C
Max Operating Temperature200 °C
Max Power Dissipation800 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation800 mW
Schedule B8541210080
Dimensions
Height6.6 mm