Microchip DN3525N8-G

Name: Microchip DN3525N8-G
Brand: Microchip
SKU: DN3525N8-G

Power MOSFET, N Channel, 250 V, 360 mA, 6 ohm, SOT-89, Surface Mount

$ 0.705

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Distributor		SKU		Min	Pkg
Newark	2	DN3525N8-G	8,103	1	Cut Tape	1.120	1.050	0.988	0.988	0.988
Onlinecomponents.com		DN3525N8-G	2,000	500	Bulk				0.642	0.628
DigiKey	2	DN3525N8-GDKR-ND	40	1	Custom Reel	0.880	0.880	0.750	0.750	0.750
Master Electronics		DN3525N8-G	2,000	500					0.642	0.628
TME	2	DN3525N8-G	0	1		0.890	0.890	0.890	0.890	0.890	17h

数据表和文档

下载 Microchip DN3525N8-G 的数据表和制造商文档。

Microchip

Datasheet14 页8 年前

Future Electronics

Arrow Electronics

Farnell

Electro Sonic

库存历史记录

3 个月趋势:

-15.41%

CAD 模型

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供应链

Projected EOL Date2034-05-05

Country of AssemblyChina

Country of FabricationUnited States of America

Country of OriginChina

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.0095

Lifecycle StatusProduction (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)

描述

由其分销商提供的 Microchip DN3525N8-G 的描述。

Power MOSFET, N Channel, 250 V, 360 mA, 6 ohm, SOT-89, Surface Mount

Avnet Silica

Trans MOSFET N-CH 250V 0.36A 4-Pin (3+Tab) SOT-89

Verical

DN3525 Series 250 V 360 mA N-Channel Depletion-Mode Vertical DMOS FET - SOT-89-3

Future Electronics

1.6W(Ta) 20V 3.5V 1N 250V 6¦¸@ 200mA,0V 360mA 350pF@25V SOT-89,TO-243AA 1.6mm

UnikeyIC

Mosfet Transistor, N Channel, 360 Ma, 250 V, 6 Ohm Rohs Compliant: Yes |Microchip Technology DN3525N8-G

Newark

Power Field-Effect Transistor, 0.36A I(D), 250V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

Semicontronic

MOSFET, N CH, 250V, 0.36A, SOT-89-3; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Powe

element14 APAC