Microchip 2N6660

Name: Microchip 2N6660
Brand: Microchip
SKU: 2N6660

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 13.7

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制造商页面数据表

价格与库存

授权分销商

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Distributor		SKU		Min	Pkg
Future Electronics		2N6660	117	2	Bulk		14.240	13.760	13.760	13.760
Onlinecomponents.com		2N6660	508	5	Bulk		15.850	13.950	13.590	13.590
Master Electronics		2N6660	508	5			15.850	13.950	13.590	13.590
Arrow Electronics	2	2N6660	24	1		15.868	15.868	15.868	15.868	15.868
NAC Semi		MCHP00000002151	55	500					13.700	13.700	10h

数据表和文档

下载 Microchip 2N6660 的数据表和制造商文档。

Microchip

Datasheet10 页10 年前

Verical

element14 APAC

Future Electronics

Nu Horizons

库存历史记录

3 个月趋势:

+3.62%

CAD 模型

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供应链

Projected EOL Date2034-02-19

Country of AssemblyThailand

Country of FabricationUnited States of America

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.39.0060

Lifecycle StatusProduction (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusREL (Last Updated: 2 days ago)

描述

由其分销商提供的 Microchip 2N6660 的描述。

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Semicontronic

2N6660 Series 60 V 3 Ohm Through Hole N-Channel HEXFET Mosfet - TO-205AD (TO-39)

Future Electronics

Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag / MOSFET N-CH 60V 0.41A TO39-3

Win Source

MOSFET, N CH, 60V, 1.7A, TO-39; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.7ohm; Rds; Available until stocks are exhausted Alternative available

Farnell

Mosfet, N Channel, 60V, 1.1A, To-39; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1.1A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):2.7Ohm; Tensión Vgs De Medición Rds(On):10V |Solid State 2N6660

Newark