Littelfuse IXDN55N120D1

Name: Littelfuse IXDN55N120D1
Brand: Littelfuse
SKU: IXDN55N120D1

IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Farnell	IXDN55N120D1	0	1		22.270*	22.270*	22.270*	22.270*	22.270*	10h
ATI ACCURATE TECHNOLOGY	IXDN55N120D1-IXYS	3			87.000	73.950	73.950	73.950	73.950	1h
Win Source	WS-IXDN55N120D1	1,000	1		257.78	231.11	231.11	231.11	231.11	11h
Worldway Electronics	IXDN55N120D1	2,917	7	Tube		10.285	9.970	9.446	9.446	9h
IC Components Ltd.	IXDN55N120D1	52,688			32.220	32.220	32.220	32.220	32.220	3d

数据表和文档

下载 Littelfuse IXDN55N120D1 的数据表和制造商文档。

IHS

Datasheet5 页18 年前

Newark

TME

WattBits

iiiC

供应链

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-10-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-04-30

LTD Date2023-09-30

描述

由其分销商提供的 Littelfuse IXDN55N120D1 的描述。

IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B

Future Electronics

Disc Igbt Npt-Standard Sot-227B/Minibloc/Tube |Littelfuse IXDN55N120D1

Newark

IGBT, N-CH, 1.2KV, 100A, SOT-227B; Transistor Polarity: N Channel; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipatio; Available until stocks are exhausted Alternative available

Farnell

Configuration = Single / Continuous Collector Current (Ic) A = 100 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.8 / Emitter Leakage Current nA = 500 / Power Dissipation (Pd) W = 450 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD

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