相关零件
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM | IC SRAM 2M PARALLEL 48MINIBGA
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IC DRAM 64M PARALLEL 54TFBGA / 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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描述
由其分销商提供的 ISSI IS62WV25616EBLL-45BLI 的描述。
SRAM Chip Async Single 2.8V/3.3V 4M-Bit 256K x 16 45ns 48-Pin Mini-BGA
8542.32.00.41 Surface Mount Tray 256KX16 ic memory 45ns 6mm 4194304bit 2.2V
4Mb £¨256K x 16£© 256 k x 16 2.2V 22mA 3.6V Parallel BGA
Standard SRAM, 256KX16, 45ns, CMOS, PBGA48
IC SRAM 4MBIT PARALLEL 48MINIBGA
SRAM, 4MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES
å˜å‚¨å™¨, SRAM, 4MB, -40 至 85度;
Static Random Access Memory (SRAM)
制造商别名
ISSI 在全球拥有多个品牌，分销商可将其用作替代名称。ISSI 也可称为以下名称：
- ISSI Integrated Silicon Solution Inc
- ICSI
- ISS
- Integrated Silicon Solution Inc
- INTEGRATED SILICON SOLUTION
- Integrated Silicon Solution Inc (ISSI)
- Integrated Silicon Solutions
- INTEGRATED SILICON S
- INTEGRATED SILICON SOLUTION (ISSI)
- INTEGRATED CIRCUIT SOLUTION
- ISSI(Integrated Silicon Solution)
- INTEGRATED SILICON SOLUTIONS (ISSI)
- ISSI INC
- Integrated Circuit Solution Inc
- ISSI/ICSI
- INTEGRATED SILICON SOLUTIONS INC
- INTEGRATED SILICON SOLUTI
- INTEGRATED CIRCUIT SOLUTI
- ISSI/INTEGRATED
- ISSI Integrated Silicon Solut
- ISSI (INTEGRATED SILICON SOLUTIONS)
- ISSI Integrated Silicon
- ISSI (INTEGRATED SILICON SOLU
- Integrated Silicon Solutions Inc(ISSI)
- ISSI/HIT
技术规格
Physical
Case/PackageTFBGA
Number of Terminals48
Technical
Access Time45 ns
InterfaceParallel
Max Operating Temperature85 °C
Max Supply Voltage3.6 V
Memory TypeRAM, SRAM - Asynchronous
Min Operating Temperature-40 °C
Min Supply Voltage2.2 V
Number of Circuits1
Operating Supply Voltage3 V
Schedule B8542320040
Temperature GradeIndustrial
Dimensions
Height - Seated (Max)1.2 mm
Length8 mm
Terminal Pitch750 µm
Width6 mm