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描述
由其分销商提供的 ISSI IS61WV51216BLL-10MLI 的描述。
8Mb £¨512K x 16£© 512 k x 16 2.4V 95mA 3.6V Parallel BGA-48 11mm*9mm*1.2mm
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IC SRAM 8MBIT PARALLEL 48MINIBGA
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SRAM 8M (512Kx16) 10ns Async SRAM 3.3v
Static Random Access Memory (SRAM)
Sram, 8Mbit, 10Ns, Bga-48; Memory Size:8Mbit; Sram Memory Configuration:512K X 16Bit; Supply Voltage Range:2.4V To 3.6V; Memory Case Style:Bga; No. Of Pins:48Pins; Access Time:10Ns; Operating Temperature Min:-40°C; Operating Rohs Compliant: Yes |Integrated Silicon Solution (Issi) IS61WV51216BLL-10MLI
制造商别名
ISSI 在全球拥有多个品牌，分销商可将其用作替代名称。ISSI 也可称为以下名称：
- ISSI Integrated Silicon Solution Inc
- ICSI
- ISS
- Integrated Silicon Solution Inc
- INTEGRATED SILICON SOLUTION
- Integrated Silicon Solution Inc (ISSI)
- Integrated Silicon Solutions
- INTEGRATED SILICON S
- INTEGRATED SILICON SOLUTION (ISSI)
- INTEGRATED CIRCUIT SOLUTION
- ISSI(Integrated Silicon Solution)
- INTEGRATED SILICON SOLUTIONS (ISSI)
- ISSI INC
- Integrated Circuit Solution Inc
- ISSI/ICSI
- INTEGRATED SILICON SOLUTIONS INC
- INTEGRATED SILICON SOLUTI
- INTEGRATED CIRCUIT SOLUTI
- ISSI/INTEGRATED
- ISSI Integrated Silicon Solut
- ISSI (INTEGRATED SILICON SOLUTIONS)
- ISSI Integrated Silicon
- ISSI (INTEGRATED SILICON SOLU
- Integrated Silicon Solutions Inc(ISSI)
- ISSI/HIT
技术规格
Physical
Case/PackageTFBGA
Number of Pins48
Number of Terminals48
Technical
Access Time10 ns
Address Bus Width19 b
Density8 Mb
InterfaceParallel
Max Operating Temperature85 °C
Max Supply Current95 mA
Max Supply Voltage3.6 V
Memory Size1 MB
Memory TypeRAM, SDR, SRAM - Asynchronous
Min Operating Temperature-40 °C
Min Supply Voltage2.4 V
Nominal Supply Current95 mA
Number of Circuits1
Number of Ports1
Number of Words512000
Operating Supply Voltage3 V
Schedule B8542320040
Sync/AsyncAsynchronous
Temperature GradeIndustrial
Word Size16 b
Dimensions
Height - Seated (Max)1.2 mm
Length11 mm
Terminal Pitch750 µm
Width9 mm