描述
由其分销商提供的 ISSI IS43TR16640C-125JBL 的描述。
Active Volatile ROHS3Compliant Parallel ic memory 0C~85C TC 1.425V~1.575V 1Gb 64M x 16 20ns
128MB 64Mx16 1.425V 200mA 1.575V 800MHz Parallel 16bit TWBGA-96
DRAM Chip DDR3 SDRAM 1Gbit 64M X 16 1.5V 96-Pin TWBGA
IC, SDRAM, DDR3, 1Gb (64M x 16), 800MHz, 20ns, TWBGA, SMD
IC DRAM 1GBIT PARALLEL 96TWBGA / SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800 MHz 20 ns 96-TWBGA (9x13)
DDR SDRAM, 64Mx16, 1.5V, 8K, BGA-96,RoHS
ISSI SCT
DDR3 DRAM, 64MX16, CMOS, PBGA96
IC DRAM 1GBIT PARALLEL 96TWBGA
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/S @ 10-10-10, 96 Ball Bga (9Mm X13Mm) Rohs |Integrated Silicon Solution (Issi) IS43TR16640C-125JBL
制造商别名
ISSI 在全球拥有多个品牌，分销商可将其用作替代名称。ISSI 也可称为以下名称：
- ISSI Integrated Silicon Solution Inc
- ICSI
- ISS
- Integrated Silicon Solution Inc
- INTEGRATED SILICON SOLUTION
- Integrated Silicon Solution Inc (ISSI)
- Integrated Silicon Solutions
- INTEGRATED SILICON S
- INTEGRATED SILICON SOLUTION (ISSI)
- INTEGRATED CIRCUIT SOLUTION
- ISSI(Integrated Silicon Solution)
- INTEGRATED SILICON SOLUTIONS (ISSI)
- ISSI INC
- Integrated Circuit Solution Inc
- ISSI/ICSI
- INTEGRATED SILICON SOLUTIONS INC
- INTEGRATED SILICON SOLUTI
- INTEGRATED CIRCUIT SOLUTI
- ISSI/INTEGRATED
- ISSI Integrated Silicon Solut
- ISSI (INTEGRATED SILICON SOLUTIONS)
- ISSI Integrated Silicon
- ISSI (INTEGRATED SILICON SOLU
- Integrated Silicon Solutions Inc(ISSI)
- ISSI/HIT
技术规格
Physical
Case/PackageTFBGA
Number of Terminals96
Technical
Max Frequency800 MHz
Max Operating Temperature95 °C
Max Supply Current224 mA
Max Supply Voltage1.575 V
Min Operating Temperature-40 °C
Min Supply Voltage1.425 V
Number of Circuits1
Number of Ports1
Operating Supply Voltage1.5 V
Schedule B8542320015
Dimensions
Height - Seated (Max)1.2 mm
Length13 mm
Terminal Pitch800 µm
Width9 mm