描述
由其分销商提供的 ISSI IS43LD16640C-18BLI 的描述。
DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 64Mx16 1.2V/1.8V 134-Pin TFBGA
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~85C TA 1.14V 1073741824bit 10mm
Mobile LPDDR2 S4 SDRAM 1Gb 64Mx16 533MHz -18ns 134-Pin FBGA Tray
LPDDR2-1066 64Mx16 (1Gb) Ind 134-BGA
LPDDR2 DRAM, 64MX16, CMOS, PBGA134
IC DRAM 1GBIT PARALLEL 134TFBGA
1G, 1.2/1.8V, Lpddr2, 64Mx16, 533Mhz, 134 Ball Bga (10Mm X 11.5Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43LD16640C-18BLI
制造商别名
ISSI 在全球拥有多个品牌，分销商可将其用作替代名称。ISSI 也可称为以下名称：
- ISSI Integrated Silicon Solution Inc
- ICSI
- ISS
- Integrated Silicon Solution Inc
- INTEGRATED SILICON SOLUTION
- Integrated Silicon Solution Inc (ISSI)
- Integrated Silicon Solutions
- INTEGRATED SILICON S
- INTEGRATED SILICON SOLUTION (ISSI)
- INTEGRATED CIRCUIT SOLUTION
- ISSI(Integrated Silicon Solution)
- INTEGRATED SILICON SOLUTIONS (ISSI)
- ISSI INC
- Integrated Circuit Solution Inc
- ISSI/ICSI
- INTEGRATED SILICON SOLUTIONS INC
- INTEGRATED SILICON SOLUTI
- INTEGRATED CIRCUIT SOLUTI
- ISSI/INTEGRATED
- ISSI Integrated Silicon Solut
- ISSI (INTEGRATED SILICON SOLUTIONS)
- ISSI Integrated Silicon
- ISSI (INTEGRATED SILICON SOLU
- Integrated Silicon Solutions Inc(ISSI)
- ISSI/HIT
技术规格
Physical
Case/PackageTFBGA
Number of Terminals134
Technical
Max Operating Temperature85 °C
Max Supply Voltage1.3 V
Min Operating Temperature-40 °C
Min Supply Voltage1.14 V
Number of Circuits1
Number of Ports1
Operating Supply Voltage1.2 V
Temperature GradeIndustrial
Dimensions
Height - Seated (Max)1.1 mm
Length11.5 mm
Terminal Pitch650 µm
Width10 mm