供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2012-08-25
LTD Date2013-02-25
描述
由其分销商提供的 International Rectifier IRLR024N 的描述。
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET, POWER; N-CHANNEL; 0.065 OHMS (MAX.); 55 V (MIN.); 45 W (MAX.) @ 25C
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: No
制造商别名
International Rectifier 在全球拥有多个品牌，分销商可将其用作替代名称。International Rectifier 也可称为以下名称：
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vds)55 V
Gate to Source Voltage (Vgs)16 V
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation38 W
Rise Time74 ns
Voltage Rating (DC)55 V