International Rectifier IRF720PBF

MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V

Trans MOSFET N-CH 400V 3.3A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 400V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.5°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V