The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source activeclamp. This device combines a HEXFET (R) POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 oC or when the drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability issignificantly enhanced by the active clamp and covers most inductive load demagnetizations.