Infineon SPP20N60S5XKSA1

Name: Infineon SPP20N60S5XKSA1
Brand: Infineon
SKU: SPP20N60S5XKSA1

Single N-Channel 600 V 190 mOhm 79 nC CoolMOS Power Mosfet - TO-220-3, PG-TO220-3, RoHS

$ 1.903

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min
Avnet		SPP20N60S5XKSA1	189	50			1.849	1.765	1.765	2d
Newark		SPP20N60S5XKSA1.	189	50			1.880	1.880	1.880
Arrow Electronics	2	SPP20N60S5XKSA1	10,195	1	5.183	5.183	2.435	1.916	1.916
Rutronik		TMOSP10630	400	50			2.580	2.180	2.180	14h
Rochester Electronics		SPP20N60S5XKSA1	326				1.760	1.570	1.480	7h

数据表和文档

下载 Infineon SPP20N60S5XKSA1 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

element14 APAC

Farnell

B+D Enterprises

DigiKey

库存历史记录

3 个月趋势:

+0.26%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-09

Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Infineon SPP20N60S5XKSA1 的描述。

Single N-Channel 600 V 190 mOhm 79 nC CoolMOS Power Mosfet - TO-220-3, PG-TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 600V 20A 3-Pin (3+Tab) TO-220

Verical

20 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies SPP20N60S5XKSA1.

Newark