Infineon SPB08P06PGATMA1

Name: Infineon SPB08P06PGATMA1
Brand: Infineon
SKU: SPB08P06PGATMA1

MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity: P Channel; Continuous Drain

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min
Farnell		SPB08P06PGATMA1	0	1	0.557*	0.457*	0.457*	0.457*	0.457*	7h
Win Source	2	WS-SPB08P06PG	6,249	45			1.114	0.743	0.743	9h
Worldway Electronics	2	SPB08P06PG	12,650	7		0.170	0.164	0.156	0.156	10h
Aztech		SPB08P06PGATMA1	10,891		1.100	1.100	1.100	1.100	1.100	5h
Anlinkda		SPB08P06PG	37,112		0.541	0.484	0.412	0.402	0.391	1d

数据表和文档

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IHS

Datasheet8 页19 年前

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-08-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

描述

由其分销商提供的 Infineon SPB08P06PGATMA1 的描述。

MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain

Newark

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Farnell

Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Infineon