Infineon SPA20N60CFDXKSA1

Name: Infineon SPA20N60CFDXKSA1
Brand: Infineon
SKU: SPA20N60CFDXKSA1

Power MOSFET, N Channel, 600 V, 20.7 A, 0.19 ohm, TO-220F, Through Hole

$ 1.979

NRND

制造商页面数据表

价格与库存

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Distributor	SKU		Min
Newark	SPA20N60CFDXKSA1	391	1	4.520	3.530	2.860	1.990	1.990
Rochester Electronics	SPA20N60CFDXKSA1	113				1.880	1.680	1.580	6h
Avnet	SPA20N60CFDXKSA1	0	500				1.967	1.877	8h
Arrow Electronics	SPA20N60CFDXKSA1	0	500				1.963	1.963
Farnell	SPA20N60CFDXKSA1	391	1	7.107*	4.984*	4.433*	2.391*	2.391*	6h

数据表和文档

下载 Infineon SPA20N60CFDXKSA1 的数据表和制造商文档。

IHS

Datasheet12 页14 年前

element14 APAC

TME

Farnell

库存历史记录

3 个月趋势:

-6.19%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-09-06

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon SPA20N60CFDXKSA1 的描述。

Power MOSFET, N Channel, 600 V, 20.7 A, 0.19 ohm, TO-220F, Through Hole

EBV Elektronik

Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

Infineon

MOSFET, N, 600V, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20.7A; Resistance, Rds On:0.22ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; ;RoHS Compliant: Yes

Newark

MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220F; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC