Infineon SPA11N80C3XKSA1

Name: Infineon SPA11N80C3XKSA1
Brand: Infineon
SKU: SPA11N80C3XKSA1

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

$ 1.176

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Distributor		SKU		Min	Pkg
Avnet	2	98K0552	48	1		3.250	1.630	1.470	1.210	1.210	1d
Newark		SPA11N80C3XKSA1	55	1		3.250	1.630	1.470	1.210	1.210
Arrow Electronics	2	SPA11N80C3XKSA1	16,550	1		1.454	1.454	1.346	1.144	1.144
Rutronik		TMOSP6824	900	50				1.500	1.190	1.190	22h
DigiKey		448-SPA11N80C3XKSA1-ND	1,613	1	Tube	3.480	3.480	1.573	1.182	1.023

数据表和文档

下载 Infineon SPA11N80C3XKSA1 的数据表和制造商文档。

IHS

Datasheet10 页0 年前

Datasheet10 页17 年前

Newark

Arrow Electronics

Farnell

iiiC

库存历史记录

3 个月趋势:

+141%

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供应链

Lifecycle StatusNRND (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon SPA11N80C3XKSA1 的描述。

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

EBV Elektronik

Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube

Verical

800V 11A 34W 450m´Î@10V7.1A 3.9V@680Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

MOSFET, N, COOLMOS, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:800V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:11A; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:41W; Power Dissipation Pd:41W; Power Dissipation Ptot Max:41W; Pulse Current Idm:33A; Termination Type:Through Hole; Voltage Vds:800V; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

element14 APAC

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

Infineon