供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-11-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIPA60R800CEXKSA1
MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 5.6A 3-Pin(3+Tab) TO-220FP Tube
InfineonIPA50R800CEXKSA2
MOSFET N-CH 500V 5A PG-TO220 FPK / 500V Superjunction MOSFET for Consumer and Lighting Applications
描述
由其分销商提供的 Infineon SPA04N60C3XKSA1 的描述。
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 650V 4.5A TO220-FP
MOSFET, N, 600V, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissi
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time9.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance490 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance950 mΩ
Package Quantity500
Power Dissipation31 W
Rds On Max950 mΩ
Rise Time2.5 ns
Turn-Off Delay Time58.5 ns
Turn-On Delay Time6 ns