Infineon ISC800P06LMATMA1

P-Ch MOSFET 83W(Tc) 60V 19.6A 80mΩ@16A,10V 1.4nF@30V 2V@724µA 14.8nC@10V SMD

Trans MOSFET P-CH 60V 19.6A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 19.3A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.