Infineon ISC0806NLSATMA1
$ 1.165
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2022-02-28
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2025-03-31
LTD Date2025-09-30
描述
由其分销商提供的 Infineon ISC0806NLSATMA1 的描述。
Mosfet, N-Ch, 100V, 97A, Tdson Rohs Compliant: Yes |Infineon Technologies ISC0806NLSATMA1
Power MOSFET, N Channel, 100 V, 97 A, 0.005 ohm, TDSON, Surface Mount
MOSFET, N-CH, 100V, 97A, TDSON; Available until stocks are exhausted
Power Field-Effect Transistor, 97A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, 97A, TDSON;
Infineon NChannelMOSTube OptiMOS 5series, Vds=100 V, 97 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
MOSFET N-CH 100V 16A/97A TDSON
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0806NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)97 A
Drain to Source Resistance5.4 mΩ
Drain to Source Voltage (Vds)100 V
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1