Infineon ISC0802NLSATMA1
$ 1.061
Production
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-22
Lifecycle StatusProduction (Last Updated: 8 months ago)
描述
由其分销商提供的 Infineon ISC0802NLSATMA1 的描述。
Infineon N-Ch MOSFET, OptiMOS 5, Vds=100V, 150A, SuperSO8 5×6, SMD, 8-Pin
100 V 22 A 2.5 W SMT N-Channel OptiMOSTM5 Power-Transistor - PG-TDSON-8-7
Power MOSFET, N Channel, 100 V, 150 A, 0.0033 ohm, TDSON, Surface Mount
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0802NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)150 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Turn-Off Delay Time24 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1 mm