由其分销商提供的 Infineon ISC0703NLSATMA1 的描述。
TRANSISTOR, MOSFET, OPTIMOS 5 POWER, 60V, N-CHANNEL, LOGIC LEVEL, 57A
Power MOSFET, N Channel, 60 V, 57 A, 0.0058 ohm, TDSON, Surface Mount
Infineon N-Ch MOSFET OptiMOS 5, Vds=60V 57A SuperSO8 5x6 SMD 8-Pin
60 V 13 A 3 W Surface Mount N-Channel OptiMOSTM5 Power-Transistor - PG-TDSON-8
Power Field-Effect Transistor, 57A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon ISC0703NLSATMA1 MOSFET
TRENCH 40<-<100V PG-TDSON-8 / N-Channel 60 V 13A (Ta), 57A (Tc) 3W (Ta), 44W (Tc) Surface Mount PG-TDSON-8
场效应管, MOSFET, N沟道, 60V, 57A, TDSON;
MOSFET N-CH 60V 13A/57A TDSON-8
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.